Core technology
InGaAs/InP single-photon avalanche diodes with patterned metasurfaces for near-unity absorption efficiency in the active region.
Operating wavelength
900 nm – 1700 nm
Peak detection efficiency¹
> 75%
Dark count rate³
< 1000 Hz
Optical coupling
Free space (fiber coupling optional: FC/PC or FC/APC)
Active area
Ø 10–50 µm diameter
Output pulse interface
SMA
¹ The wavelength corresponding to the peak detection efficiency depends on the geometry of the nanostructured array. The target specification is based on the measured absorption efficiency and the calculated impact ionization probability required to initiate the avalanche process in our device design.
² 20 ps timing jitter measured in an InP nanostructure array. S. Gibson et al., Nature Nanotechnology 14 (5), 473–479 (2019).
³ To be determined. A dark count rate of < 100 Hz was measured in InGaAs/GaAs nanostructure arrays at 125 K. A.C. Farrell et al., Nano Letters 19 (1), 582–590 (2018).